Beyond EUV (BEUV) lithography has been developing for further downscaling of semiconductor devices. We propose Mo₂N/B multilayer (ML) for designing high-reflectance, high-durability BEUV mirrors.
Beyond EUV (BEUV) lithography has been developing for further downscaling of semiconductor devices. We propose Mo₂N/B multilayer (ML) for designing high-reflectance, high-durability BEUV mirrors.